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IXFA10N60P
IXFP10N60P
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-263 Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 10 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
6
11
1720
160
14
23
27
65
21
32
12
10
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.62 ° C/W
R thCH
TO-220
0.50
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
V GS = 0V
10
A
I SM
V SD
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
30
1.5
A
V
TO-220 Outline
t rr
I RM
Q RM
I F = 0.5 ? I D25 , V GS = 0V
-di/dt = 100A/ μ s
V R = 100V
120
3
320
200
ns
A
nC
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins:
1 - Gate
2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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